| PART |
Description |
Maker |
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| H03N60 H03N60F H03N60E |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| H06N60 TO-220AB TO-263 TO-220FP |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
|
| H07N60 H07N60F H07N60E |
N-Channel Power Field Effect Transistor
|
HSMC[Hi-Sincerity Mocroelectronics]
|
| H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| H02N65 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| TO-220AB TO-220FP TO-263 |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
|
